BJT Bipolar Junction Transistor

用法例句

The peudo heterojunction bipolar transistor(PHBT) is a homojunction bipolar transistorhaving a moderately doped emitter and a heavily doped base, providing a bandgap profile similar toactual heterojunction bipolar transistors (HBT).

具有重掺杂基区和中等掺杂发射区的硅赝异质结双极晶体管（ＰＨＢＴ），其能带结构类似于真实异质结双极晶体管（ＨＢＴ）的能带结构，本文研究了硅赝异质结双极晶体管的电流增益，截止频率和基区电阻等电学参数性能及其与温度的关系，并指出了硅赝异质结双极晶体管在低温下应用的潜力。

The apparent bandgap narrowing in bipolar transistors with ion implanted and epitaxial Si 0.

这种方法从双极晶体管的集电极电流公式出发 ,利用 VBE做自变量 ,在室温和液氮温度下测量器件的Gum mel图 ,选取 ln IC随 VBE变化最为线性的一部分读出 VBE及相应的 IC数值 ,获得两条 VBE- ln IC直线 ,通过求解两条直线的交点可以计算出基区的禁带变窄量ΔEG。

A photocurrent compensation method of bipolar transistors under high dose rate radiation and its experimental research;

双极晶体管瞬态辐射光电流分流补偿法及其实验研究

The circuit is constructed by a operational amplifier and bipolar transistor current mirrors with multiple outputs.

该电路由一集成运算放大器及多端输出的双极晶体管电流镜构成。

The main structure and key performance parameters of the bipolar transistor were studied and designed,it was taped out and tested.

对双极晶体管结构和关键性能参数进行了研究和设计,并进行了流片测试。

This paper describes a kind of new simulation modeling method for two intersection using multi-agents.

采用多Agent技术和协商协调机制,建立了交通系统中的双交叉口中观仿真模型,给出了该模型的Pascal语言描述,提出了一种基于遗传算法的交叉口Agent预测、通讯、协商与控制方式,仿真结果表明了该方法的有效性。

switching time of bipolar transistor

双极晶体管开关时间

equivalent circuit of bipolar transistor

双极晶体管等效电路

Study on Characteristics of 4H-SiC npn Bipolar Transistor;

4H-SiC npn双极晶体管特性研究

The Behavior of Insulated Gate Bipolar Transistor (IGBTs) in Low Temperature;

绝缘栅双极晶体管（IGBT）低温特性研究

SiGe Heterojunction Bipolar Transistor (SiGe HBT) Research and Design;

SiGe异质结双极晶体管（SiGe HBT）研究与设计

Application of the Driving Module EXB841 for Insulated Gate Bipolar Transistor

绝缘栅双极晶体管驱动模块EXB841的应用

Study on ESD of InGaP Heterojunction Bipolar Transistors

InGaP异质结双极晶体管ESD特性研究

Study of High Frequency 4H-SiC Bipolar Junction Transistor

高频4H-SiC双极晶体管的研制

Status of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors Technology

InP/GaAsSb/InP双异质结双极晶体管技术发展现状(Ⅰ)

Bipolar- Transistors that are able to use both holes and electrons as charge carriers.

双极晶体管-能够采用空穴和电子传导电荷的晶体管。

Simulation Study of 4H-SiC Metal-Semiconductor Bipolar Junction Transistors

4H-SiC金属—半导体双极晶体管的模拟研究

The DFM of Ultrahigh SiGe HBT;

超高频SiGe异质结双极晶体管的可制造性设计

Simulation, Design and Fabrication of GaAs-based Heterostructure Bipolar Transistor;

GaAs基异质结双极晶体管（HBT）的模拟、设计与制作

Experimental Research on Reliability of GeSi/Si Heterojunction Bipolar Transistors (HBTs);

GeSi/Si异质结双极晶体管（HBT）可靠性实验研究

The Study and Design of High Frequency Power SiGe Heterojunction Bipolar Transistors(HBTs);

高频功率SiGe异质结双极晶体管（HBTs）的研究与设计

bipolar power transistor physics

双极功率晶体管物理学

double-emitter chopper transistor

双发射极斩波晶体管

heterojunction bipolar transistor

异质结双极型晶体管