GaAs pn junction IR source

用法例句

gallium arsenide ultrared lighting transistor

砷化镓红外发光晶体管

gallium arsenide fet

砷化镓场效应晶体管

Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)

在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管(摘要)

gallium arsenide avalanche photodiode

砷化镓雪崩光电二极管

Study of the Sulfur Passivation in GaAs Microwave Power Mesfet;

砷化镓微波功率场效应晶体管的硫钝化研究

Miciowave Amplifier Using GaAs FET

采用砷化镓场效应晶体管的微波放大器

Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method

GB/T17170-1997非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法

GaAs Microwave FET with High Gain, High Gate-Drain Breakdown Voltage and Low Noise Figure

高增益、高栅-漏击穿、低噪声微波砷化镓场效应晶体管

Studies on GaAs Surface Properties and Surface Oxidation Excited by UV Light;

砷化镓表面特性及紫外光激发下表面氧化反应研究

Measuring thickness of epitaxial layers of gallium arsenide by infrared interference

GB/T8758-1988砷化镓外延层厚度红外干涉测量方法

far ultrared-ray photoelectric transistor

远红外线光电晶体管

ga al as semiconductor laser

镓铝砷半导体激光器

"Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."

常用的本质半导体是硅、锗以及砷化镓等的单晶。

gallium arsenide injection laser

砷化镓注入式激光器

GaAs laser terrain profiler

砷化镓激光地形测绘仪

galinium arsenide

ph.1. 砷化镓

Numerical Simulation of Heat, Momentum and Mass Transport in LEC Growth of GaAs Crystal

LEC法砷化镓晶体生长中熔体流动与传热传质数值模拟

Boat-grown gallium arsenide single crystals and As-cut slices

GB/T11094-1989水平法砷化镓单晶及切割片