Grain boundary reaction

用法例句

The influences of additives' thermal expansion coefficient on samples' boundary residual stress and mechanical properties were investigated.

建立了薄晶界应力模型,定性地计算了晶界应力,讨论了添加剂的热膨胀系数对Y-TZP陶瓷晶界应力及力学性能的影响。

Delayed Phenomenon of Peritectic Reaction Under Non-equilibrium Cooling

非平衡凝固时包晶反应滞后现象的研究

Through observation of SEM phase micrographs of specimen heat-treated at different conditions,the peritectic reaction μAl.

通过对名义成分为Al11Cr2的铸锭在不同温度下进行退火处理后的金相分析,首次观察到了包晶反应μ-Al4Cr+Lη-Al11Cr2,且证实了共析反应η-Al11Cr2-μAl4Cr+-θAl7Cr的存在。

It is researched the influence of cooling rate and the content of silicon and manganese alloy on peritectic reaction and position of peritectic point in Fe-C alloy.

研究了冷却速率和硅、锰合金元素含量对Fe-C合金的包晶反应和包晶点位置的影响;由于CSP薄板坯冷却速率快,Fe-C相图向左下方移动,包晶反应区域的碳含量为0。

GRAIN BOUNDARIES EFFECT IN TRANSPORT PROPERTIES OF MANGANITE OXIDE La _( 1-x) A_ xMnO _ 3(A=Ca,Pb);

锰氧化物La_(1-x)A_xMnO_3(A=Ca,Pb)输运性质中的晶界效应

Studies on Grain-boundary States in Polysilicon Films FET;

多晶硅薄膜场效应结构的晶粒间界能态分布

Analysis of the Flaw of Electric Charges Accumulation between Alignment Layer and Liquid Cystal Layer of Liquid Crystal Cell

液晶面板取向层与液晶层界面的电荷累积效应分析

Surface Physics of Liquid Crystal--Studies on the Effects of the Interface and Anchoring Energy;

液晶材料表面物理——界面效应和锚定能的研究

The Influence of Interface Effects on the Band Structures in 2D Phononic Crystals

界面效应对二维声子晶体材料能带结构的影响

Slow Light Effect in a Dielectric Waveguide of a Single Photonic Crystal Interface

单光子晶体界面介质波导中的慢光效应

Influence of the Third Thermal Boundary Condition on the Thermal Effect of Laser Crystal

第三类热边界条件对激光晶体热效应的影响

polysilicon fet

多晶硅场效应晶体管

double diffused mos fet

dmos场效应晶体管

metal insulator semiconductor fet

mis场效应晶体管

The Spatial Distribution of Directors and Eletro-Optical Characteristic in LCD Cell with One Dimension Boundarycondition;

一维周期边界条件下液晶盒中指向矢分布与电光效应

Thermal Effect of LD End-Pumped Laser Crystal Rods Based on Convective Heat-Transfer about Side Surface

基于边界对流传热的LD端面抽运圆柱形晶体的热效应

The Boundary of Foreign Settlement and Its Effect in Hankou

租界之“界”——汉口租界的边界与边界效应

vertical junction fet

垂向结型场效应晶体管

source-and-drain junction

源漏结-声效应晶体管的

n-channel transistor

ｎ沟道场效应晶体管

vertical channel fet

垂直沟道场效应晶体管

linear load field effect transistor

线性负载场效应晶体管