cadmium zinc tellutide substrate material

用法例句

HgCdTe is a very important fundamental infrared semiconductor material for our national high technology, HgCdTe and related devices have been adopted as the key component in the region of our independent space technology and used in the weather satellite of our country.

碲镉汞材料是我国战略性高技术-红外光电技术的重要支撑性与基础性材料,已作为我国的自主技术在国家的航天领域得到了在轨应用。

Research on Growth and Properties of CdZnTe Single Crystal;

优质碲锌镉单晶的生长及性能测试

Evolution of Solid-liquid Interface of CdZnTe Crystal Growth by Vertical Bridgman Method;

碲锌镉垂直布里奇曼法晶体生长过程固液界面的演化

Morphology characteristics of etch pits on CdZnTe crystals developed by usual etchants;

碲锌镉晶体常用腐蚀剂的坑形特性研究

An Experimental Study of the Polishing Process for CZT Crystal;

碲锌镉晶体基片抛光工艺的实验研究

Firstly,in Raman,we measures CZT s Raman spectra in Anti-Stokes.

文章对碲锌镉 (CZT) (1 1 1 )取向的拉曼光谱和光荧光谱作了分析。

Hydrogen Passivate HgCdTe: First-principle Study

红外碲镉汞材料氢钝化行为的第一性原理研究

Microstructures and Properties of Mercury Cadmium Telluride (HgCdTe) by Pulsed Laser Deposition (PLD)

脉冲激光沉积（PLD）碲镉汞（HgCdTe）薄膜材料结构特性的研究

mercruy telluride-cadmium telluride detector

碲化汞-碲化镉探测器

Studies on Altering Character of Metal-doped CdTe Thin Films by Ion Implant Technique;

金属离子束注入对碲化镉薄膜材料的改性研究

optically optimal tellurium-cadmium-mercury infrared detector

光优型碲镉汞红外探测器

The Theoretical Analysis and Testing of HgCdTe Loophole P-N Junction;

碲镉汞环孔P-N结理论分析与测试

LONG-WAVE INFRARED 2048-ELEMENTS LINEAR HgCdTe FOCAL PLANE ARRAY

长波红外2048元线列碲镉汞焦平面器件

SPECTRAL STUDY ON RESPONSE OF HgCdTe IR TWO-COLOR DETECTOR ARRAYS

碲镉汞红外双色探测器响应光谱研究

Study on the Microstructure of Hg1-xCdxTe Crystals by Scanning Electron Microscopy

碲镉汞晶体结构性质的电子显微术研究

The Study of the Micro Dewar for Long Linear HgCdTe IRFPA

长线列碲镉汞红外焦平面微型杜瓦的研究

Study of PV HgCdTe detector irriated by femtosecond pulse laser in infrared wave length

飞秒红外激光辐照PV型碲镉汞探测器实验研究

Developments of Wet and Dry Process Techniques for HgCdTe Detector Fabrication

碲镉汞探测器制备湿法和干法工艺的研究进展

Trends in Two-color Infrared Focal Plane Detectors of MCT

双色碲镉汞红外焦平面探测器发展现状

Analysis of the Main Defects and Its′ Origin on HgCdTe Film Grown by LPE

碲镉汞液相外延薄膜典型缺陷及其起源分析

The measurement results for Hg Cd Te photodiodes are presented.

文中列出了碲镉汞光电二极管结电容的测量结果.

The microstructure of(Hg,Cd)Te crystal has been studied by analyticai EM.

用分析电子显微镜观察了碲镉汞晶体的显微结构。

Damage Mechanisms of Laser on PV-type Single Element HgCdTe Device and Visible-light CCD;

单元光伏型碲镉汞探测器及可见光CCD的激光损伤机理研究

Transient and permanent defects of HgCdTe photovoltaic detectors by γ irradiation

γ辐射对碲镉汞光伏探测器的暂态损伤与永久损伤