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global emissions

中文翻译全球排放量 GE

同义词释义

    1)global emissions,全球排放量 GE2)Ge quantum dots,Ge量子点3)Germanium,Ge4)Ge/Si quantum-well,Ge/Si量子阱5)Ge/Si quantum dots,Ge/Si量子点6)SiGe quantum dots,Si Ge量子点

用法例句

    Thermal diffusion effect of self-assembled Ge quantum dots probed by fluorescence X-ray absorption fine structure;

    自组装Ge量子点热扩散效应的XAFS研究

    Self-organized growth of Ge quantum dots by UHV/CVD;

    UHV/CVD自对准生长Ge量子点(英文)

    High density of Ge quantum dots (QDs) with size of less than 10 nm were obtained on Si(001) surface by optimizing the growth parameters.

    通过调节生长参数,在Si(001)衬底表面利用分子束外延(MBE)方法生长得到尺寸小于10nm的高密度Ge量子点。

    The Determination of Germanium and Impurities in Organic Germanium (Ge-132) by AAS;

    原子吸收光谱法测定有机锗(Ge─132)中的锗及其杂质

    Scanning tunneling microscopy (STM) and x_ray photoemission spectroscopy (XPS) studies of germanium growth on Ru(0001) were carried out.

    报道Ge在Ru(0 0 0 1)表面上生长以及相互作用行为的扫描隧道显微镜 (STM)和x射线光电子能谱 (XPS)研究 。

    Two metal-germanium schottky junctions on and under the waveguide were fabricated to form metal-germanium-metal photodetector and the dark current density of 0.

    以外延Ge薄膜为吸收区,在Si基上制备了Ge波导光电探测器。

    A novel flash memory cell with stacked structure (Si substrate/SiGe quantum dots/tunneling oxide/poly-Si floating gate) is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing.

    提出了一种用于半导体闪速存储器单元的新的Si/Si Ge量子点/隧穿氧化层/多晶硅栅多层结构,该结构可以实现增强F-N隧穿的编程和擦除机制。

    Si-base Ge Quantum-Dots Photodetector Used in Fiber Communication Field

    基于Si衬底Ge量子点光纤通信用光电探测器研制

    Investigation on the Stress and Strain Distribution of Ge/Si Semiconductor Self-Organized Quantum Dots;

    Ge/Si半导体量子点应力应变分布研究

    ANALYSIS OF STRUCTURAL DESIGN FEATURES OF GE COAL-WATER SLURRY GASIFIER

    GE水煤浆气化炉的结构设计特点分析

    Study of Nanocrystalline Ge Preparation and Neutron Transmutation Doping;

    Ge纳米晶制备及中子嬗变掺杂的研究

    Atomic Simulations on Thermal Conductivity of Several Si,Ge Nanowires

    几种Si、Ge纳米线导热系数的原子模拟

    Properties of Germanium Thin Film and Its Application in Photon Counting Imaging System

    Ge薄膜特性及其在光子计数成像系统中的应用

    First-principles Calculation of Electronic Structure and Optical Properties of Si∶Ge

    利用第一性原理研究Ge∶Si电子结构与光学性质

    Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell

    GaInP/GaAs/Ge三结太阳电池的电子辐照损伤效应

    The Phonon Spectrum and Group Velocity of Si/Ge Superlattices under Hydrostatic Pressure

    压力下Si/Ge超晶格热电材料的声子谱和群速度

    Observation on surface morphology of Ge nano-films grown by ion beam sputtering

    离子束溅射生长Ge纳米薄膜的表面形貌观察

    Spin-Dephasing on Quantum Dot System with a Nearby Quantum Point Contact

    量子点接触测量对量子点系统退相干的影响

    The Study of Electrical Property Degradation of GaAs/Ge Solar Cells by Electron and Proton Co-Irradiation;

    质子和电子共同辐照下GaAs/Ge太阳电池电性能退化研究

    lowering of freezing point

    冰点下降(测分子量用)

    In(Ga)As Quantum-Dot Infrared Photodetectors

    In(Ga)As量子点红外探测器

    Study of InAs/GaAs Quantum Dots

    InAs/GaAs系列量子点研究

    Study of Energy and Electronic Properties in Semiconductor Quantum Dots;

    导体量子点中电子能量和性质的研究

    Atomistic Simulations of Elastic Moduli in GaN Quantum Dots

    GaN量子点弹性模量的分子动力学模拟

    The Decoherence of the Parabolic Linear Bound Potential Quantum Dot Charge Qubit

    抛物势量子点电荷量子比特的消相干

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