multiple bonding

用法例句

Over coming lattice and orientation mismatch, direct wafer bonding allows fabricating of structures and devices which can get through hetero-epitaxial growth.

晶片直接键合技术是材料集成的一项新工艺,是近年来集成光电子领域的研究热点之一。

The polycrystalline silicon sheets with columnar grain structure are made by controlling the solidification processing of the silicon sheets.

通过对硅片凝固过程的控制，制得２０ｍｍ×２０ｍｍ×１，２ｍｍ具有柱状晶组织的多晶硅片，表面平整，晶粒平均尺寸０。

The influence of potential on the microstructure of porous lamellar crystal was observed by scanning electron microscopy.

5mol/L Zn(NO3)2溶液为电解液,在聚苯乙烯球(polystyrene spheres,PS)模板的辅助下,采用电沉积方法制备了多孔片晶ZnO薄膜。

Direct wafer bonding is a new process of material integrating and has received tremendous attention in the research of optoelectronics and microelectronics field.

晶片直接键合技术是材料集成的一项新工艺，是近年来集成光电子领域的研究热点之一。

The application of wafer bonding technology in long? wave vertical cavity devices is given.

最后介绍了晶片键合技术在长波长垂直腔型器件研制中的应用。

direct-coupled transistor amplifier

直接耦合晶体管放大器

DCTL [Direct-Coupled Transistor Logic]

直接耦合电晶体逻辑

direct-coupled transistor logic

直接耦合晶体管逻辑

Research of GaAs/InP Wafer Bonding Technology;

GaAs/InP晶片键合技术的研究

Investigation of Low-Temperature Wafer Bonding and Long-Wavelength Tunable Integrated Optical Demultiplexing and Receiving Device for WDM Application;

低温晶片键合技术及长波长可调谐WDM解复用光接收集成器件的研究

Bonding Interface- The area where the bonding of two wafers occurs.

绑定面-两个晶圆片结合的接触区。

Researches on Electrical and Mechanical Characteristics of Low Temperature InP/Si Wafer Bonding;

InP/Si低温晶片键合的电特性和力学特性的研究

Theory Analysis and Experiment Research of Low Temperature Si/InP Wafer Bonding Technology;

Si/InP晶片低温键合技术的理论分析和实验研究

Experiments of Low Temperature Wafer Bonding and Analysis on Relevant Dynamics;

低温晶片键合的实验和动力学特性研究

direct-coupled transistor logic circuit

直接耦合晶体管逻辑电路

DCUTL (Direct-Coupled Unipolar Transistor Logic)

直接耦合单极晶体管逻辑

High Brightness ODR LED Based on Au/Au Wafer Bonding

基于Au/Au直接键合的高亮度ODRLED

The three dimensional temperature distribution of laser bonding with a Gaussian thermal source is modeled using the finite element method.

在硅／玻璃激光键合中，温度场的分布是影响晶片能否键合的关键因素。

The Simulation for Dynamics of Ⅲ-V Material Epitaxy Growth and the Experiment of Wafer Bonding;

Ⅲ-V族材料外延生长的动力学模拟仿真及半导体晶片键合的实验

In this process, a standard stencil printing technique is used to print solder paste directly onto silicon wafers( Figure4).

在这个过程，标准印刷技术用来把锡膏直接印刷到硅晶片上。

Theoretical Study on Spin-spin Coupling Constants of Directly Bonded Atoms;

直接键连原子间核自旋偶合常数的理论研究